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| SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID P-TO262 P-TO263-3-2 560 0.28 16 V A P-TO220-3-31 P-TO220-3-1 2 1 P-TO220-3-1 23 * P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP16N50C3 SPB16N50C3 SPI16N50C3 SPA16N50C3 Maximum Ratings Parameter Package P-TO220-3-1 P-TO263-3-2 P-TO262 Ordering Code Q67040-S4583 Q67040-S4642 Q67040-S4582 Marking 16N50C3 16N50C3 16N50C3 16N50C3 P-TO220-3-31 Q67040-S4581 Symbol ID Value SPP_B_I SPA Unit Continuous drain current TC = 25 C TC = 100 C A 16 10 161) 101) 48 460 0.64 16 20 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=8, VDD=50V ID puls EAS EAR IAR VGS VGS Ptot 48 460 0.64 16 20 30 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C 160 34 Operating and storage temperature T j , Tstg -55...+150 C Rev. 2.1 Page 1 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 400 V, ID = 16 A, Tj = 125 C dv/dt 50 V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at T j=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=675A, VGS=VDS VDS=500V, VGS=0V, Tj=25C Tj=150C Symbol min. RthJC RthJC_FP RthJA RthJA FP Tsold - Values typ. max. 0.78 3.7 62 80 260 Unit K/W C Values typ. 600 3 0.1 0.25 0.68 1.5 max. 3.9 Unit V 500 2.1 - V(BR)DS VGS=0V, ID=16A A 1 100 100 0.28 nA Gate-source leakage current I GSS VGS=20V, VDS=0V VGS=10V, ID=10A Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 2.1 Page 2 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions min. Values typ. 14 1600 800 30 64 124 10 8 50 8 max. - Unit g fs Ciss Coss Crss V DS2*I D*RDS(on)max, ID=10A V GS=0V, V DS=25V, f=1MHz - S pF Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V GS=0V, V DS=0V to 400V td(on) tr td(off) tf V DD=380V, V GS=0/10V, ID=16A, RG =4.3 - ns VDD=380V, ID=16A - 7 36 66 5 - nC VDD=380V, ID=16A, VGS=0 to 10V V(plateau) VDD=380V, ID=16A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Soldering temperature for TO-263: 220C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 2.1 Page 3 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.012 0.023 0.043 0.149 0.17 0.069 Tj P tot (t) C th1 C th2 C th,n T am b Symbol IS ISM VSD trr Qrr Irrm dirr /dt Conditions min. TC=25C Values typ. 1 420 7 40 1100 max. 16 48 1.2 - Unit A VGS=0V, IF=IS VR=380V, IF=IS , diF/dt=100A/s - V ns C A A/s Tj=25C Value SPP_B_I SPA 0.012 0.023 0.043 0.176 0.371 2.522 R th1 Unit K/W Symbol Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPP_B_I 0.0002495 0.0009406 0.001298 0.00362 0.009484 0.077 SPA 0.0002495 0.0009406 0.001298 0.00362 0.008025 0.412 Unit Ws/K E xternal H eatsink Rev. 2.1 Page 4 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 1 Power dissipation Ptot = f (TC) 170 SPP16N50C3 2 Power dissipation FullPAK Ptot = f (TC) 36 W W 140 28 120 Ptot 100 80 60 40 20 0 0 Ptot C 24 20 16 12 8 4 0 0 20 40 60 80 100 120 160 20 40 60 80 100 120 C 160 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC =25C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Rev. 2.1 Page 5 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 5 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 6 Transient thermal impedance FullPAK ZthJC = f (t p) parameter: D = tp/t 10 1 K/W 10 0 K/W 10 0 ZthJC 10 -1 ZthJC 10 -1 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp 7 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 60 8 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 35 A 20V 7V 6.5V A 20V 7V 6V 25 ID ID 40 6V 20 30 5.5V 5V 15 4.5V 20 5V 10 4V 10 4.5V 5 0 0 5 10 15 V VDS 25 0 0 5 10 15 V VDS 25 Rev. 2.1 Page 6 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 2 10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 10 A, VGS = 10 V 1.6 SPP16N50C3 RDS(on) 4V 4.5V 5V 6V RDS(on) 1.2 1.2 1 8V 20V 0.8 0.8 0.6 0.4 0.4 0.2 98% typ 0 0 5 10 15 20 A ID 30 0 -60 -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 60 12 Typ. gate charge VGS = f (Q Gate) parameter: ID = 16 A pulsed 16 SPP16N50C3 A 50 45 Tj = 25C V 12 VGS 40 ID 10 0,2 VDS max 35 30 25 Tj = 150C 0,8 VDS max 8 6 20 15 10 2 5 0 0 1 2 3 4 5 6 7 8 4 V 10 VGS Page 7 0 0 10 20 30 40 50 60 70 80 nC 100 Q Gate Rev. 2.1 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPP16N50C3 14 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 16 A A 12 IAR 10 1 IF 10 Tj(start) = 25C 8 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 6 Tj(start) = 125C 4 2 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 VSD s 10 t AR 4 15 Avalanche energy EAS = f (Tj) par.: ID = 8 , V DD = 50 V 0.5 16 Drain-source breakdown voltage V(BR)DSS = f (Tj) 600 SPP16N50C3 V mJ V(BR)DSS 570 560 550 540 530 520 EAS 0.3 0.2 510 500 490 0.1 480 470 460 0 20 40 60 80 100 120 160 C Tj 450 -60 -20 20 60 100 C 180 Tj Rev. 2.1 Page 8 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 17 Avalanche power losses PAR = f (f ) parameter: E AR=0.64mJ 450 18 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 W pF Ciss 350 10 3 PAR 300 250 10 2 200 150 100 50 02 10 10 0 0 10 1 Crss Coss 10 3 10 4 10 5 6 Hz 10 C 100 200 300 V 500 f VDS 19 Typ. Coss stored energy Eoss=f(VDS) 9 J 7 Eoss 6 5 4 3 2 1 0 0 100 200 300 V 500 VDS Rev. 2.1 Page 9 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Definition of diodes switching characteristics Rev. 2.1 Page 10 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 P-TO-220-3-1 B 10 0.4 3.7 0.2 A 1.270.13 4.44 15.38 0.6 2.8 0.2 C 5.23 0.9 13.5 0.5 3x 0.75 0.1 1.17 0.22 2x 2.54 0.25 M 0.5 0.1 2.510.2 ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-2 (D 2-PAK) Rev. 2.1 9.98 0.48 0.05 Page 11 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 P-TO-262-3-1 (I2-PAK) 10 0.2 0...0.3 8.5 1) 1) A B 4.4 1.27 1 0.3 11.6 0.3 2.4 C 4.55 0.2 13.5 0.5 0...0.15 1.05 3 x 0.75 0.1 2 x 2.54 1) 0.5 0.1 2.4 0.25 M ABC Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01) Rev. 2.1 9.25 0.2 7.55 0.05 Page 12 2004-04-07 SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 13 2004-04-07 |
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